General view

2N2647

ICCE

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
05 OCT 2026

Specifications

Structure / technology
UJT
Max. power dissipation (Pc, Ptot, Pd)
0.3 W
Max. emitter current (Ie)
0.05 A
Max. peak emitter current (Iem)
2 A
Max. emitter–base 1 voltage (Veb1)
30 V
Max. interbase voltage (Vb2b1)
30 V
Intrinsic stand-off ratio (η)
0.68…0.82
Interbase resistance (Rbb)
4.7…9.1 kΩ
Emitter reverse current (Ieb0), max
0.2 µA
Peak-point current (Ip), max
2 µA
Valley current (Iv), min
8 mA
Emitter saturation voltage (Veb1 sat)
5 V
Package
TO-18

Sources: [1][3]

Description

The 2N2647 is a unijunction transistor (UJT) listed in the Agenda radioelectronistului (2nd edition, 1989) among the unijunction transistors made in Romania by ICCE (marked in the Agenda as a CCSIT-CE component), in a TO-18 package [1].

In the scan of the 2nd edition the TO-18 drawing for the 2N2646 and 2N2647 carries handwritten marks (B1 and B2 rewritten); the gallery shows the TO-18 drawing of the same table, which is also how the 1st edition of the Agenda (1983) draws these two transistors (E at the top, B1 on the left, B2 on the right) [3]. The maximum interbase resistance (9.1 kΩ) is taken from the 1st edition; in the scan of the 2nd edition it reads „0,2”.

Coded as (JEDEC system) [2]:

Part Meaning
2 device with 3 electrodes (transistor, thyristor etc.)
N semiconductor device
2647 identification number (01–9999)

Max. peak emitter current = pulsed emitter current (IEMS, maximum surge emitter current), as a footnote of the table says [1].

Gallery

ICCE 2N2647: TO-18 pinout (UJT: E = emitter, B1 = base 1, B2 = base 2)No image available
TO-18 pinout (UJT: E = emitter, B1 = base 1, B2 = base 2)

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 30.2 „Tranzistoare unijoncțiune produse în R.S.R.”, p. 552
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.3 „Sistemul american JEDEC”, p. 480
  3. [3]N. Drăgulănescu – „Agenda radioelectronistului”, 1st edition, Editura Tehnică, 1983, section 3.9.5.2 „TUJ-uri produse în RSR”, p. 488