General view

2N3250

ICCE

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
06 OCT 2026

Specifications

Material
Si
Polarity
PNP
Max. power dissipation (Pc, Ptot, Pd)
1.2 W
Max. collector–emitter voltage |Vce|
40–60 V (see Variants)
Transition frequency (ft)
250 MHz
DC current gain (hFE), min
50
DC current gain (hFE), max
150
Collector–emitter saturation voltage (Vce sat)
0.5 V
Package
TO-18
Application
low frequency, medium power

Sources: [1]

Variants (2)

2N325040
2N3250A60

Click a column heading to sort. „+” adds a variant to the comparison (2N3250).

Description

The 2N3250 is a low-frequency, medium-power silicon PNP transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by ICCE (marked in the Agenda as a CCSIT-CE component), in a TO-18 package [1].

Coded as (JEDEC system) [2]:

Part Meaning
2 device with 3 electrodes (transistor, thyristor etc.)
N semiconductor device
3250 identification number (01–9999)

hFE (h21E) measured at IC = 10 mA; Vce sat at IC = 50 mA [1].

Gallery

ICCE 2N3250: TO-18 pinoutNo image available
TO-18 pinout

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.9 „Tranzistoare cu siliciu, PNP, de joasă frecvență, medie putere”, p. 529
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.3 „Sistemul american JEDEC”, p. 480