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Specifications
- Material
- Si
- Polarity
- NPN
- Max. power dissipation (Pc, Ptot, Pd)
- 11.6 W
- Max. collector–emitter voltage |Vce|
- 40 V
- Max. collector–emitter voltage, base shorted |Vces|
- 65 V
- Max. emitter–base voltage |Veb|
- 4 V
- Max. peak collector current (Icm)
- 1.5 A
- Max. junction temperature (Tj)
- 200 °C
- Transition frequency (ft)
- 500 MHz
- Collector capacitance (Cc)
- 10 pF
- DC current gain (hFE), min
- 10
- DC current gain (hFE), max
- 100
- Collector–emitter saturation voltage (Vce sat)
- 1 V
- Thermal resistance, junction–case (Rth j-c)
- 15 °C/W
- Package
- TO-60
- Application
- high frequency, power
Sources: [1]
Description
The 2N3375 is a high-frequency silicon NPN power transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by ICCE (marked in the Agenda as a CCSIT-CE component), in a TO-60 package [1].
The capacitance is given in the table as CCB, measured at f = 1 MHz [1].
Coded as (JEDEC system) [2]:
| Part | Meaning |
|---|---|
| 2 | device with 3 electrodes (transistor, thyristor etc.) |
| N | semiconductor device |
| 3375 | identification number (01–9999) |
hFE (h21E) measured at IC = 250 mA, VCE = 5 V; ft at IC = 125 mA; Vce sat at IC = 500 mA [1].
Gallery
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No documents available yet.
References
- [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.16 „Tranzistoare cu siliciu, NPN, de înaltă frecvență, de putere”, p. 538
- [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.3 „Sistemul american JEDEC”, p. 480