General view

2N3632

ICCE

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
05 OCT 2026

Specifications

Material
Si
Polarity
NPN
Max. power dissipation (Pc, Ptot, Pd)
23 W
Max. collector–emitter voltage |Vce|
40 V
Max. collector–emitter voltage, base shorted |Vces|
65 V
Max. emitter–base voltage |Veb|
4 V
Max. peak collector current (Icm)
3 A
Max. junction temperature (Tj)
200 °C
Transition frequency (ft)
400 MHz
Collector capacitance (Cc)
20 pF
DC current gain (hFE), min
10
DC current gain (hFE), max
150
Collector–emitter saturation voltage (Vce sat)
1 V
Thermal resistance, junction–case (Rth j-c)
7.5 °C/W
Package
TO-60
Application
high frequency, power

Sources: [1]

Description

The 2N3632 is a high-frequency silicon NPN power transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by ICCE (marked in the Agenda as a CCSIT-CE component), in a TO-60 package [1].

The capacitance is given in the table as CCB, measured at f = 1 MHz [1].

Coded as (JEDEC system) [2]:

Part Meaning
2 device with 3 electrodes (transistor, thyristor etc.)
N semiconductor device
3632 identification number (01–9999)

hFE (h21E) measured at IC = 250 mA, VCE = 5 V; ft at IC = 250 mA; Vce sat at IC = 1000 mA [1].

Gallery

ICCE 2N3632: TO-60 pinoutNo image available
TO-60 pinout

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.16 „Tranzistoare cu siliciu, NPN, de înaltă frecvență, de putere”, p. 538
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.3 „Sistemul american JEDEC”, p. 480