General view

2N3866

ICCE

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
05 OCT 2026

Specifications

Material
Si
Polarity
NPN
Max. power dissipation (Pc, Ptot, Pd)
5 W
Max. collector–base voltage |Vcb|
55 V
Max. collector–emitter voltage |Vce|
30 V
Max. emitter–base voltage |Veb|
3.5 V
Max. collector current |Ic|
0.4 A
Max. junction temperature (Tj)
200 °C
Transition frequency (ft)
700 MHz
Feedback capacitance (C12e, Cre)
3 pF
DC current gain (hFE), min
10
DC current gain (hFE), max
200
Package
TO-39
Application
high frequency, medium power

Sources: [1]

Description

The 2N3866 is a high-frequency, medium-power silicon NPN transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by ICCE (marked in the Agenda as a CCSIT-CE component), in a TO-39 package [1].

Coded as (JEDEC system) [2]:

Part Meaning
2 device with 3 electrodes (transistor, thyristor etc.)
N semiconductor device
3866 identification number (01–9999)

hFE (h21E) measured at IC = 50 mA [1].

Gallery

ICCE 2N3866: TO-39 pinout (collector connected to the case)No image available
TO-39 pinout (collector connected to the case)

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.14 „Tranzistoare cu siliciu, NPN, de înaltă frecvență, medie putere”, p. 536
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.3 „Sistemul american JEDEC”, p. 480