General view

2N3955

ICCE

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
05 OCT 2026

Specifications

Material
Si
Polarity
N-channel
Structure / technology
JFET, dual
Max. gate–source voltage |Vgs|
50 V
Gate–source cut-off / threshold voltage (Vgs off, Vgs th)
> −1 V
Zero-gate-voltage drain current (Idss)
0.5…5 mA
Gate leakage current (Igss)
−0.1 nA
Forward transconductance (gm, gfs)
1 mA/V
Package
TO-99 / MP48

Sources: [1]

Description

The 2N3955 is a silicon dual N-channel junction field-effect transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the field-effect transistors made in Romania by ICCE (marked in the Agenda as a CCSIT-CE component), in a TO-99 / MP48 package [1].

In the package column, next to the three dual transistors 2N5912, 2N3955 and 2N5545, the table prints a TO-99 drawing and a drawing of an MP48 package (leads marked K, A1–A3), without saying which belongs to which transistor [1]. The gate leakage current of the 2N3955 is printed as „0,1 –” nA.

Coded as (JEDEC system) [2]:

Part Meaning
2 device with 3 electrodes (transistor, thyristor etc.)
N semiconductor device
3955 identification number (01–9999)

Gallery

ICCE 2N3955: TO-99 pinout (dual FET)No image available
TO-99 pinout (dual FET)
ICCE 2N3955: MP48 package, as drawn in the table (leads marked K, A1–A3)No image available
MP48 package, as drawn in the table (leads marked K, A1–A3)

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 29.2 „Tranzistoare cu efect de cîmp produse în R.S.R.”, p. 548
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.3 „Sistemul american JEDEC”, p. 480