General view

2N3962

ICCE

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
05 OCT 2026

Specifications

Material
Si
Polarity
PNP
Max. power dissipation (Pc, Ptot, Pd)
0.36 W
Max. collector–emitter voltage |Vce|
60 V
Max. junction temperature (Tj)
150 °C
Transition frequency (ft)
40 MHz
Noise figure (NF)
3 dB
Collector–emitter saturation voltage (Vce sat)
0.4 V
Package
TO-18
Application
low frequency, low power

Sources: [1]

Description

The 2N3962 is a low-frequency, low-power silicon PNP transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by ICCE (marked in the Agenda as a CCSIT-CE component), in a TO-18 package [1].

The small-signal current gain h21e is given as 1?0–450: the second digit of the lower limit is illegible in the scan of the Agenda (100 or 160), and the 1st edition gives other values for this transistor.

Coded as (JEDEC system) [2]:

Part Meaning
2 device with 3 electrodes (transistor, thyristor etc.)
N semiconductor device
3962 identification number (01–9999)

ft at IC = 10 mA; Vce sat at IC = 5 mA [1].

Gallery

ICCE 2N3962: TO-18 pinoutNo image available
TO-18 pinout

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.7 „Tranzistoare cu siliciu, PNP, de joasă frecvență, mică putere”, p. 527
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.3 „Sistemul american JEDEC”, p. 480