General view

2N3964

ICCE

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
05 OCT 2026

Specifications

Material
Si
Polarity
PNP
Max. power dissipation (Pc, Ptot, Pd)
0.36 W
Max. collector–emitter voltage |Vce|
45 V
Max. junction temperature (Tj)
150 °C
Transition frequency (ft)
90 MHz
Small-signal current gain (hfe)
250–600
Noise figure (NF)
2 dB
Collector–emitter saturation voltage (Vce sat)
0.5 V
Package
TO-18
Application
low frequency, low power

Sources: [1]

Description

The 2N3964 is a low-frequency, low-power silicon PNP transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by ICCE (marked in the Agenda as a CCSIT-CE component), in a TO-18 package [1].

Coded as (JEDEC system) [2]:

Part Meaning
2 device with 3 electrodes (transistor, thyristor etc.)
N semiconductor device
3964 identification number (01–9999)

Small-signal current gain h21e measured at IC = 1 mA, VCE = 5 V; ft at IC = 10 mA; Vce sat at IC = 5 mA [1].

Gallery

ICCE 2N3964: TO-18 pinoutNo image available
TO-18 pinout

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.7 „Tranzistoare cu siliciu, PNP, de joasă frecvență, mică putere”, p. 527
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.3 „Sistemul american JEDEC”, p. 480