General view

2N4093

ICCE

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
05 OCT 2026

Specifications

Material
Si
Polarity
N-channel
Structure / technology
JFET
Max. power dissipation (Pc, Ptot, Pd)
1.8 W
Max. drain–source voltage |Vds|
40 V
Max. gate–source voltage |Vgs|
40 V
Gate–source cut-off / threshold voltage (Vgs off, Vgs th)
−1…−5 V
Zero-gate-voltage drain current (Idss)
8 mA
Drain–source on-resistance (Rds on)
80 Ω
Package
TO-18

Sources: [1]

Description

The 2N4093 is a silicon N-channel junction field-effect transistor (JFET) listed in the Agenda radioelectronistului (2nd edition, 1989) among the field-effect transistors made in Romania by ICCE (marked in the Agenda as a CCSIT-CE component), in a TO-18 package [1].

Coded as (JEDEC system) [2]:

Part Meaning
2 device with 3 electrodes (transistor, thyristor etc.)
N semiconductor device
4093 identification number (01–9999)

Gallery

ICCE 2N4093: TO-18 pinout (FET: D = drain, S = source, G = gate)No image available
TO-18 pinout (FET: D = drain, S = source, G = gate)

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 29.2 „Tranzistoare cu efect de cîmp produse în R.S.R.”, p. 547
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.3 „Sistemul american JEDEC”, p. 480