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Specifications
- Material
- Si
- Polarity
- NPN
- Max. power dissipation (Pc, Ptot)
- 0.36 W
- Max. collector–emitter voltage |Vce|
- 30 V
- Max. collector current |Ic|
- 0.002 A
- Max. junction temperature (Tj)
- 150 °C
- Transition frequency (ft)
- 250 MHz
- Small-signal current gain (hfe)
- 50–150
- Collector–emitter saturation voltage (Vce sat)
- 0.3 V
- Package
- TO-18
- Application
- low frequency, low power
Sources: [1]
Description
The 2N4123 is a low-frequency, low-power silicon NPN transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by ICCE (marked in the Agenda as a CCSIT-CE component), in a TO-18 package [1].
The maximum collector current is printed as 2 mA in the Agenda [1].
Coded as (JEDEC system) [2]:
| Part | Meaning |
|---|---|
| 2 | device with 3 electrodes (transistor, thyristor etc.) |
| N | semiconductor device |
| 4123 | identification number (01–9999) |
Small-signal current gain h21e measured at IC = 2 mA, VCE = 5 V; Vce sat at IC = 50 mA; ft at IC = 10 mA [1].
Gallery
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Documents
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References
- [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.6 „Tranzistoare cu siliciu, NPN, de joasă frecvență, mică putere”, p. 526
- [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.3 „Sistemul american JEDEC”, p. 480