General view

2N4125

ICCE

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
05 OCT 2026

Specifications

Material
Si
Polarity
PNP
Max. power dissipation (Pc, Ptot, Pd)
1 W
Max. collector–emitter voltage |Vce|
30 V
Max. collector current |Ic|
0.002 A
Max. junction temperature (Tj)
150 °C
Transition frequency (ft)
200 MHz
Small-signal current gain (hfe)
50–150
Collector–emitter saturation voltage (Vce sat)
0.4 V
Package
TO-18
Application
low frequency, low power

Sources: [1]

Description

The 2N4125 is a low-frequency, low-power silicon PNP transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by ICCE (marked in the Agenda as a CCSIT-CE component), in a TO-18 package [1].

The maximum collector current is printed as 2 mA in the Agenda [1].

Coded as (JEDEC system) [2]:

Part Meaning
2 device with 3 electrodes (transistor, thyristor etc.)
N semiconductor device
4125 identification number (01–9999)

Small-signal current gain h21e measured at IC = 2 mA, VCE = 5 V; ft at IC = 10 mA; Vce sat at IC = 50 mA [1].

Gallery

ICCE 2N4125: TO-18 pinoutNo image available
TO-18 pinout

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.7 „Tranzistoare cu siliciu, PNP, de joasă frecvență, mică putere”, p. 527
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.3 „Sistemul american JEDEC”, p. 480