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Specifications
- Material
- Si
- Polarity
- NPN
- Max. power dissipation (Pc, Ptot, Pd)
- 0.3 W
- Max. collector–base voltage |Vcb|
- 15 V
- Max. collector–emitter voltage |Vce|
- 6 V
- Max. junction temperature (Tj)
- 175 °C
- Transition frequency (ft)
- 600–800 MHz (see Variants)
- DC current gain (hFE), min
- 10–15 (see Variants)
- Collector–emitter saturation voltage (Vce sat)
- 0.3–0.4 V (see Variants)
- Turn-on time (ton)
- 15 ns
- Turn-off time (toff)
- 15 ns
- Package
- TO-18
- Application
- switching
Sources: [1]
Variants (2)
| Compare | ||||
|---|---|---|---|---|
| 2N709 | 600 | 10 | 0.3 | |
| 2N709A | 800 | 15 | 0.4 |
Click a column heading to sort. „+” adds a variant to the comparison (2N709).
Description
The 2N709 is a silicon NPN switching transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by ICCE (marked in the Agenda as a CCSIT-CE component), in a TO-18 package [1].
Coded as (JEDEC system) [2]:
| Part | Meaning |
|---|---|
| 2 | device with 3 electrodes (transistor, thyristor etc.) |
| N | semiconductor device |
| 709 | identification number (01–9999) |
hFE (h21E) measured at IC = 10 mA, VCE = 0.5 V; Vce sat at IC = 3 mA; hFE printed in the table as „> 10” [1].
2N709A
hFE (h21E) measured at IC = 20 mA, VCE = 1 V; Vce sat at IC = 3 mA; hFE printed in the table as „> 15” [1].
Gallery
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No documents available yet.
References
- [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.18 „Tranzistoare cu siliciu, NPN, de comutație”, p. 541
- [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.3 „Sistemul american JEDEC”, p. 480