General view

3N159

ICCE

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
05 OCT 2026

Specifications

Material
Si
Polarity
N-channel
Structure / technology
MOSFET
Max. power dissipation (Pc, Ptot, Pd)
0.3 W
Max. drain–source voltage |Vds|
20 V
Forward transconductance (gm, gfs)
6 mA/V
Package
TO-72

Sources: [1]

Description

The 3N159 is a silicon N-channel MOS field-effect transistor (MOSFET) listed in the Agenda radioelectronistului (2nd edition, 1989) among the field-effect transistors made in Romania by ICCE (marked in the Agenda as a CCSIT-CE component), in a TO-72 package [1].

Coded as (JEDEC system) [2]:

Part Meaning
3 device with 4 electrodes (MOSFET etc.)
N semiconductor device
159 identification number (01–9999)

Gallery

ICCE 3N159: TO-72 pinout (FET: G = gate, S = source, D = drain, B = substrate)No image available
TO-72 pinout (FET: G = gate, S = source, D = drain, B = substrate)

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 29.2 „Tranzistoare cu efect de cîmp produse în R.S.R.”, p. 547
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.3 „Sistemul american JEDEC”, p. 480