IPRS Băneasa AC184No image available
TO-1A package – pinout: E = emitter, B = base, C = collector

AC184

IPRS Băneasa

Year
Unknown
Category
Components
Type
Transistors
Documentation score
2/5
Last edited
05 OCT 2026

Specifications

Material
Ge
Polarity
PNP
Max. power dissipation (Pc, Ptot)
0.27 W
Max. collector–base voltage |Vcb|
32 V
Max. collector–emitter voltage |Vce|
20 V
Max. emitter–base voltage |Veb|
10 V
Max. collector current |Ic|
0.5 A
Transition frequency (ft)
2.5 MHz
DC current gain (hFE), min
35
DC current gain (hFE), max
400
Package
TO-1A
Application
low frequency, low power

Sources: [1][2]

Description

The AC184 is a low-frequency, low-power germanium PNP transistor made in section 2200 (germanium devices) of IPRS Băneasa [1]. The licence for the section’s alloyed indium–germanium transistors – the SFT/EFT, AC and AD series and the ASZ18, AUY31 and AUY32 power transistors in TO3 cases – and for its EFD point-contact diodes belonged to the French firm SESCOSEM of Saint-Égrève, near Grenoble [1]. The section’s lines came from the Electronica works in 1962, and it stopped making germanium devices in 1982; having only the cover of IPRS’s germanium catalogue, the book reconstructs the list of the section’s products from prospectuses and publications up to 1989 [1].

The Agenda radioelectronistului (2nd edition, 1989) lists the AC184 among the bipolar transistors made by IPRS Băneasa, in the group of low-frequency, low-power germanium PNP transistors, in a TO-1A package [2].

Coded as (Pro Electron system) [3]:

Part Meaning
A base material with an activation energy of 0.6–1 eV, e.g. germanium (0.67 eV)
C low-frequency, low-power transistor
184 serial number: three digits (100–999), for components for general use

hFE measured at IC = 300 mA [2].

Documents

No documents available yet.

References

  1. [1]N. Millea, I. Constantinescu (coord.) – „Un secol de electronică în România”, Editura Academiei Române, 2020, section VIII.1.2.2, pp. 395–396
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.1 „Tranzistoare cu germaniu, PNP, de joasă frecvență, mică putere”, p. 522
  3. [3]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.2 „Sistemul european PRO ELECTRON”, pp. 479–480