IPRS Băneasa ASZ16No image available
TO-3 package – pinout: E = emitter, B = base, C = collector (case)

ASZ16

IPRS Băneasa

Year
Unknown
Category
Components
Type
Transistors
Documentation score
2/5
Last edited
05 OCT 2026

Specifications

Material
Ge
Polarity
PNP
Max. power dissipation (Pc, Ptot)
45 W
Max. collector–base voltage |Vcb|
60 V
Max. collector–emitter voltage |Vce|
32 V
Max. collector current |Ic|
10 A
Transition frequency (ft)
0.25 MHz
Collector–emitter saturation voltage (Vce sat)
0.4 V
Thermal resistance, junction–ambient (Rth j-a)
1.5 °C/W
Package
TO-3
Application
low frequency, power

Sources: [1][2]

Description

The ASZ16 is a low-frequency germanium PNP power transistor made in section 2200 (germanium devices) of IPRS Băneasa [1]. The section’s lines came from the Electronica works in 1962, and it stopped making germanium devices in 1982; having only the cover of IPRS’s germanium catalogue, the book reconstructs the list of the section’s products from prospectuses and publications up to 1989 [1].

The Agenda radioelectronistului (2nd edition, 1989) lists the ASZ16 among the bipolar transistors made by IPRS Băneasa, in the group of low-frequency germanium PNP power transistors, in a TO-3 package [2].

Coded as (Pro Electron system) [3]:

Part Meaning
A base material with an activation energy of 0.6–1 eV, e.g. germanium (0.67 eV)
S low-power switching transistor
Z16 serial number for components for professional use: a letter (X, Y, Z…, with no coded meaning) and two digits (10–99)

The coding table counts a device as low-power when its thermal resistance junction–ambient is above 15 °C/W [3]; the Agenda’s own table gives the ASZ transistors 1.5 °C/W and 45 W [2].

Vce sat measured at IC = 10 A [2].

Documents

No documents available yet.

References

  1. [1]N. Millea, I. Constantinescu (coord.) – „Un secol de electronică în România”, Editura Academiei Române, 2020, section VIII.1.2.2, pp. 395–396
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.4 „Tranzistoare cu germaniu, PNP, de joasă frecvență, de putere”, p. 524
  3. [3]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.2 „Sistemul european PRO ELECTRON”, pp. 479–480