No image availableASZ17
IPRS Băneasa
- Manufacturer
- IPRS Băneasa

- Country
- Romania
- Year
- Unknown
- Category
- Components
- Type
- Transistors
- Documentation score
- 2/5
- Last edited
- 05 OCT 2026
Specifications
- Material
- Ge
- Polarity
- PNP
- Max. power dissipation (Pc, Ptot)
- 45 W
- Max. collector–base voltage |Vcb|
- 60 V
- Max. collector–emitter voltage |Vce|
- 32 V
- Max. collector current |Ic|
- 20 A
- Transition frequency (ft)
- 0.22 MHz
- Collector–emitter saturation voltage (Vce sat)
- 0.4 V
- Thermal resistance, junction–ambient (Rth j-a)
- 1.5 °C/W
- Package
- TO-3
- Application
- low frequency, power
Description
The ASZ17 is a low-frequency germanium PNP power transistor made in section 2200 (germanium devices) of IPRS Băneasa [1]. The section’s lines came from the Electronica works in 1962, and it stopped making germanium devices in 1982; having only the cover of IPRS’s germanium catalogue, the book reconstructs the list of the section’s products from prospectuses and publications up to 1989 [1].
The Agenda radioelectronistului (2nd edition, 1989) lists the ASZ17 among the bipolar transistors made by IPRS Băneasa, in the group of low-frequency germanium PNP power transistors, in a TO-3 package [2].
Coded as (Pro Electron system) [3]:
| Part | Meaning |
|---|---|
| A | base material with an activation energy of 0.6–1 eV, e.g. germanium (0.67 eV) |
| S | low-power switching transistor |
| Z17 | serial number for components for professional use: a letter (X, Y, Z…, with no coded meaning) and two digits (10–99) |
The coding table counts a device as low-power when its thermal resistance junction–ambient is above 15 °C/W [3]; the Agenda’s own table gives the ASZ transistors 1.5 °C/W and 45 W [2].
Vce sat measured at IC = 10 A [2].
Gallery
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Documents
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References
- [1]N. Millea, I. Constantinescu (coord.) – „Un secol de electronică în România”, Editura Academiei Române, 2020, section VIII.1.2.2, pp. 395–396
- [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.4 „Tranzistoare cu germaniu, PNP, de joasă frecvență, de putere”, p. 524
- [3]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.2 „Sistemul european PRO ELECTRON”, pp. 479–480