BCY78
IPRS Băneasa
- Manufacturer
- IPRS Băneasa
- Country
- Romania
- Year
- Unknown
- Category
- Components
- Type
- Transistors
- Documentation score
- 1/5
- Last edited
- 05 OCT 2026
Specifications
- Material
- Si
- Polarity
- PNP
- Max. power dissipation (Pc, Ptot, Pd)
- 1 W
- Max. collector–emitter voltage |Vce|
- 32 V
- Max. emitter–base voltage |Veb|
- 5 V
- Max. collector current |Ic|
- 0.2 A
- Max. junction temperature (Tj)
- 200 °C
- Transition frequency (ft)
- 180 MHz
- Small-signal current gain (hfe)
- 120–630
- Noise figure (NF)
- 6 dB
- Collector–emitter saturation voltage (Vce sat)
- 0.8 V
- Package
- TO-18
- Application
- low frequency, low power
Sources: [1]
Description
The BCY78 is a low-frequency, low-power silicon PNP transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by IPRS Băneasa, in a TO-18 package [1].
Coded as (Pro Electron system) [2]:
| Part | Meaning |
|---|---|
| B | base material with an activation energy of 1.0–1.3 eV, e.g. silicon (1.1 eV) |
| C | low-frequency, low-power transistor |
| Y78 | serial number for components for professional use: a letter (X, Y, Z…, with no coded meaning) and two digits (10–99) |
Small-signal current gain h21e measured at IC = 2 mA, VCE = 5 V; ft at IC = 10 mA; Vce sat at IC = 100 mA; noise figure at f = 1 MHz (unit as printed in this table) [1].
The Agenda lists the BCY78 a second time, marked as a CCSIT-CE component (ICCE), in the table of silicon PNP switching transistors, with these values: |VCBO| = 32 V, |VCEO| = 32 V, |VEBO| = 5 V, |IC| = 200 mA, Ptot = 390 mW, Tj = 200 °C, Vce sat = 0.4 V at IC = 100 mA, hFE (h21E) = 120…400 at IC = 10 mA, VCE = 1 V, fT = 100 MHz, ton = 85 ns, toff = 480 ns, TO-18 package [3]. The specifications above are those of the low-frequency table.
Gallery
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References
- [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.7 „Tranzistoare cu siliciu, PNP, de joasă frecvență, mică putere”, p. 527
- [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.2 „Sistemul european PRO ELECTRON”, pp. 479–480
- [3]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.17 „Tranzistoare cu siliciu, PNP, de comutație”, p. 539