General view

BD140

IPRS Băneasa

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
05 OCT 2026

Specifications

Material
Si
Polarity
PNP
Max. power dissipation (Pc, Ptot, Pd)
12.5 W
Max. collector–emitter voltage |Vce|
80 V
Max. emitter–base voltage |Veb|
5 V
Max. collector current |Ic|
1 A
Max. junction temperature (Tj)
150 °C
Transition frequency (ft)
50 MHz
DC current gain (hFE), min
40
DC current gain (hFE), max
160
Collector–emitter saturation voltage (Vce sat)
0.6 V
Collector cut-off current (Icbo)
100 nA
Package
TO-126
Application
low frequency, medium power

Sources: [1]

Description

The BD140 is a low-frequency, medium-power silicon PNP transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by IPRS Băneasa, in a TO-126 package [1].

Coded as (Pro Electron system) [2]:

Part Meaning
B base material with an activation energy of 1.0–1.3 eV, e.g. silicon (1.1 eV)
D low-frequency power transistor
140 serial number: three digits (100–999), for components for general use

hFE (h21E) measured at IC = 150 mA; ft at IC = 50 mA; Vce sat at IC = 500 mA; Icbo at VCB = 30 V [1].

Gallery

IPRS Băneasa BD140: TO-126 pinoutNo image available
TO-126 pinout

Documents

No documents available yet.

Used in (3)

Diamant (2 IC)ElectronicaTelevision sets · 1978 · Romania
Sirius (2 IC)ElectronicaTelevision sets · 1978 · Romania
Snagov (2 IC)ElectronicaTelevision sets · 1978 · Romania

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References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.9 „Tranzistoare cu siliciu, PNP, de joasă frecvență, medie putere”, p. 528
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.2 „Sistemul european PRO ELECTRON”, pp. 479–480