General view

BFW12

ICCE

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
05 OCT 2026

Specifications

Material
Si
Polarity
N-channel
Structure / technology
JFET
Max. gate–source voltage |Vgs|
30 V
Zero-gate-voltage drain current (Idss)
1…5 mA
Gate leakage current (Igss)
−0.1 nA
Forward transconductance (gm, gfs)
3.2 mA/V
Package
TO-72

Sources: [1]

Description

The BFW12 is a silicon N-channel junction field-effect transistor (JFET) listed in the Agenda radioelectronistului (2nd edition, 1989) among the field-effect transistors made in Romania by ICCE (marked in the Agenda as a CCSIT-CE component), in a TO-72 package [1].

Coded as (Pro Electron system) [2]:

Part Meaning
B base material with an activation energy of 1.0–1.3 eV, e.g. silicon (1.1 eV)
F high-frequency, low-power transistor
W12 serial number for components for professional use: a letter (X, Y, Z…, with no coded meaning) and two digits (10–99)

Gallery

ICCE BFW12: TO-72 pinout (FET: G = gate, S = source, D = drain, B = substrate)No image available
TO-72 pinout (FET: G = gate, S = source, D = drain, B = substrate)

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 29.2 „Tranzistoare cu efect de cîmp produse în R.S.R.”, p. 547
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.2 „Sistemul european PRO ELECTRON”, pp. 479–480