General view

BFW17A

ICCE

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
05 OCT 2026

Specifications

Material
Si
Polarity
NPN
Max. power dissipation (Pc, Ptot, Pd)
1.5 W
Max. collector–base voltage |Vcb|
40 V
Max. collector–emitter voltage |Vce|
25 V
Max. emitter–base voltage |Veb|
2 V
Max. collector current |Ic|
0.3 A
Max. junction temperature (Tj)
200 °C
Transition frequency (ft)
1100 MHz
Feedback capacitance (C12e, Cre)
1.7 pF
DC current gain (hFE), min
25
Collector cut-off current (Icbo)
20 µA
Package
TO-39
Application
high frequency, medium power

Sources: [1]

Description

The BFW17A is a high-frequency, medium-power silicon NPN transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by ICCE (marked in the Agenda as a CCSIT-CE component), in a TO-39 package [1].

Coded as (Pro Electron system) [2]:

Part Meaning
B base material with an activation energy of 1.0–1.3 eV, e.g. silicon (1.1 eV)
F high-frequency, low-power transistor
W17 serial number for components for professional use: a letter (X, Y, Z…, with no coded meaning) and two digits (10–99)
A letter with no coded meaning, marking a constructional variant

hFE (h21E) measured at IC = 50 mA; Icbo at VCB = 20 V [1].

The 1st edition of the Agenda (1983) lists this row as „BFW 17*”, without the letter A, with the same values, among the high-frequency, low-power transistors [3].

Gallery

ICCE BFW17A: TO-39 pinout (collector connected to the case)No image available
TO-39 pinout (collector connected to the case)

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.14 „Tranzistoare cu siliciu, NPN, de înaltă frecvență, medie putere”, p. 536
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.2 „Sistemul european PRO ELECTRON”, pp. 479–480
  3. [3]N. Drăgulănescu – „Agenda radioelectronistului”, 1st edition, Editura Tehnică, 1983, section 3.9.3.2 „Tranzistoare bipolare produse în RSR”, p. 473