General view

BLX65

ICCE

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
05 OCT 2026

Specifications

Material
Si
Polarity
NPN
Max. power dissipation (Pc, Ptot, Pd)
0.3 W
Max. collector–base voltage |Vcb|
25 V
Max. collector–emitter voltage |Vce|
18 V
Max. emitter–base voltage |Veb|
2 V
Transition frequency (ft)
1400 MHz
DC current gain (hFE)
210
Package
TO-39
Application
high frequency, low power

Sources: [1]

Description

The BLX65 is a high-frequency, low-power silicon NPN transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by ICCE (marked in the Agenda as a CCSIT-CE component), in a TO-39 package [1].

The Agenda prints a maximum junction temperature of 1500 °C for the BLX65 [1]; the value is not entered in the specifications.

Coded as (Pro Electron system) [2]:

Part Meaning
B base material with an activation energy of 1.0–1.3 eV, e.g. silicon (1.1 eV)
L high-frequency power transistor
X65 serial number for components for professional use: a letter (X, Y, Z…, with no coded meaning) and two digits (10–99)

hFE (h21E) measured at IC = 100 mA [1].

Gallery

ICCE BLX65: TO-39 pinout (collector connected to the case)No image available
TO-39 pinout (collector connected to the case)

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.12 „Tranzistoare cu siliciu, NPN, de înaltă frecvență, mică putere”, p. 534
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.2 „Sistemul european PRO ELECTRON”, pp. 479–480