General view

BSX29A

ICCE

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
05 OCT 2026

Specifications

Material
Si
Polarity
PNP
Max. power dissipation (Pc, Ptot, Pd)
0.36 W
Max. collector–base voltage |Vcb|
12 V
Max. collector–emitter voltage |Vce|
12 V
Collector–emitter saturation voltage (Vce sat)
0.65 V
Turn-off time (toff)
90 ns
Package
TO-18
Application
switching

Sources: [1]

Description

The BSX29A is a silicon PNP switching transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by ICCE (marked in the Agenda as a CCSIT-CE component), in a TO-18 package [1].

Coded as (Pro Electron system) [2]:

Part Meaning
B base material with an activation energy of 1.0–1.3 eV, e.g. silicon (1.1 eV)
S low-power switching transistor
X29 serial number for components for professional use: a letter (X, Y, Z…, with no coded meaning) and two digits (10–99)
A letter with no coded meaning, marking a constructional variant

Vce sat at IC = 150 mA [1].

Gallery

ICCE BSX29A: TO-18 pinoutNo image available
TO-18 pinout

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.17 „Tranzistoare cu siliciu, PNP, de comutație”, p. 538
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.2 „Sistemul european PRO ELECTRON”, pp. 479–480