General view

ROS04

ICCE

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
05 OCT 2026

Specifications

Material
Si
Polarity
P-channel
Structure / technology
MOSFET
Max. power dissipation (Pc, Ptot, Pd)
0.2 W
Max. drain–source voltage |Vds|
25 V
Max. drain current |Id|
0.03 A
Gate–source cut-off / threshold voltage (Vgs off, Vgs th)
−3…−6 V
Zero-gate-voltage drain current (Idss)
0.01 mA
Drain–source on-resistance (Rds on)
350 Ω
Forward transconductance (gm, gfs)
1 mA/V
Package
TO-72

Sources: [1]

Description

The ROS04 is a silicon P-channel MOS field-effect transistor (MOSFET) listed in the Agenda radioelectronistului (2nd edition, 1989) among the field-effect transistors made in Romania by ICCE (marked in the Agenda as a CCSIT-CE component), in a TO-72 package [1].

Coded as (Romanian system, internal CCSIT-CE code) [2]:

Part Meaning
RO manufacturer’s code: RO (Romania)
S silicon transistor, low power (bipolar, unijunction or field-effect)
04 identification number

Gallery

ICCE ROS04: TO-72 pinout (FET: G = gate, S = source, D = drain, B = substrate)No image available
TO-72 pinout (FET: G = gate, S = source, D = drain, B = substrate)

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 29.2 „Tranzistoare cu efect de cîmp produse în R.S.R.”, p. 547
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.7 „Sistemul românesc (codul intern CCSIT-CE)”, p. 486