General view

ROS04A–D

ICCE

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
06 OCT 2026

Specifications

Material
Si
Polarity
NPN
Max. power dissipation (Pc, Ptot, Pd)
3 W
Max. collector–emitter voltage |Vce|
40 V
Max. emitter–base voltage |Veb|
6 V
Max. collector current |Ic|
0.5 A
Max. junction temperature (Tj)
175 °C
Transition frequency (ft)
250 MHz
DC current gain (hFE), min
20–200 (see Variants)
DC current gain (hFE), max
110–550 (see Variants)
Collector–emitter saturation voltage (Vce sat)
0.7 V
Package
TO-39
Application
low frequency, medium power

Sources: [1]

Variants (4)

ROS04A20110
ROS04B75180
ROS04C120330
ROS04D200550

Click a column heading to sort. „+” adds a variant to the comparison (ROS04A–D).

Description

The ROS04A–D is a series of low-frequency, medium-power silicon NPN transistors listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by ICCE (marked in the Agenda as a CCSIT-CE component), in a TO-39 package [1]. Its codes (ROS04A, ROS04B, ROS04C and ROS04D) are in the Variants table.

Coded as (Romanian system, internal CCSIT-CE code) [2]:

Part Meaning
RO manufacturer’s code: RO (Romania)
S silicon transistor, low power (bipolar, unijunction or field-effect)
04A … 04D identification number

hFE (h21E) measured at IC = 150 mA; ft at IC = 10 mA; Vce sat at IC = 100 mA; characteristics at Tamb = 25 °C [1].

Gallery

ICCE ROS04A–D: TO-39 pinout (collector connected to the case)No image available
TO-39 pinout (collector connected to the case)

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.8 „Tranzistoare cu siliciu, NPN, de joasă frecvență, medie putere”, p. 527
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.7 „Sistemul românesc (codul intern CCSIT-CE)”, p. 486