General view

ROS225

ICCE

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
05 OCT 2026

Specifications

Material
Si
Polarity
PNP
Max. power dissipation (Pc, Ptot, Pd)
0.36 W
Max. collector–base voltage |Vcb|
12 V
Max. collector–emitter voltage |Vce|
12 V
Max. emitter–base voltage |Veb|
4.5 V
Max. junction temperature (Tj)
175 °C
DC current gain (hFE), min
40
DC current gain (hFE), max
150
Collector–emitter saturation voltage (Vce sat)
0.5 V
Turn-on time (ton)
20 ns
Turn-off time (toff)
25 ns
Package
TO-18
Application
switching

Sources: [1]

Description

The ROS225 is a silicon PNP switching transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by ICCE (marked in the Agenda as a CCSIT-CE component), in a TO-18 package [1].

Coded as (Romanian system, internal CCSIT-CE code) [2]:

Part Meaning
RO manufacturer’s code: RO (Romania)
S silicon transistor, low power (bipolar, unijunction or field-effect)
225 identification number

hFE (h21E) measured at IC = 50 mA, VCE = 1 V; Vce sat at IC = 50 mA [1].

Gallery

ICCE ROS225: TO-18 pinoutNo image available
TO-18 pinout

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.17 „Tranzistoare cu siliciu, PNP, de comutație”, p. 539
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.7 „Sistemul românesc (codul intern CCSIT-CE)”, p. 486