General view

ROS7N

ICCE

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
05 OCT 2026

Specifications

Material
Si
Polarity
N-channel
Structure / technology
JFET
Max. gate–source voltage |Vgs|
30 V
Gate–source cut-off / threshold voltage (Vgs off, Vgs th)
−2.5…−5 V
Zero-gate-voltage drain current (Idss)
8…20 mA
Gate leakage current (Igss)
−0.5 nA
Drain–source on-resistance (Rds on)
8000 Ω
Package
TO-18

Sources: [1]

Description

The ROS7N is a silicon N-channel junction field-effect transistor (JFET) listed in the Agenda radioelectronistului (2nd edition, 1989) among the field-effect transistors made in Romania by ICCE (marked in the Agenda as a CCSIT-CE component), in a TO-18 package [1].

The drain–source on-resistance of the ROS7N is printed as 8000 Ω [1].

Coded as (Romanian system, internal CCSIT-CE code) [2]:

Part Meaning
RO manufacturer’s code: RO (Romania)
S silicon transistor, low power (bipolar, unijunction or field-effect)
7N identification number

Gallery

ICCE ROS7N: TO-18 pinout (FET: D = drain, S = source, G = gate)No image available
TO-18 pinout (FET: D = drain, S = source, G = gate)

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 29.2 „Tranzistoare cu efect de cîmp produse în R.S.R.”, p. 547
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.7 „Sistemul românesc (codul intern CCSIT-CE)”, p. 486