General view

ROS865

ICCE

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
05 OCT 2026

Specifications

Material
Si
Polarity
NPN
Max. power dissipation (Pc, Ptot, Pd)
0.86 W
Max. collector–emitter voltage |Vce|
40 V
Max. emitter–base voltage |Veb|
5 V
Max. collector current |Ic|
0.8 A
Max. junction temperature (Tj)
175 °C
DC current gain (hFE), min
40
Collector–emitter saturation voltage (Vce sat)
1 V
Turn-on time (ton)
45 ns
Turn-off time (toff)
65 ns
Package
TO-39
Application
switching

Sources: [1]

Description

The ROS865 is a silicon NPN switching transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by ICCE (marked in the Agenda as a CCSIT-CE component), in a TO-39 package [1].

Coded as (Romanian system, internal CCSIT-CE code) [2]:

Part Meaning
RO manufacturer’s code: RO (Romania)
S silicon transistor, low power (bipolar, unijunction or field-effect)
865 identification number

hFE (h21E) measured at IC = 80 mA, VCE = 1 V; Vce sat at IC = 800 mA; hFE printed in the table as „> 40” [1].

Gallery

ICCE ROS865: TO-39 pinout (collector connected to the case)No image available
TO-39 pinout (collector connected to the case)

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.18 „Tranzistoare cu siliciu, NPN, de comutație”, p. 541
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.7 „Sistemul românesc (codul intern CCSIT-CE)”, p. 486