General view

ROS92

ICCE

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
06 OCT 2026

Specifications

Material
Si
Polarity
PNP
Max. power dissipation (Pc, Ptot, Pd)
5 W
Max. collector–emitter voltage |Vce|
60 V
Max. emitter–base voltage |Veb|
6 V
Max. collector current |Ic|
1 A
Max. junction temperature (Tj)
200 °C
Transition frequency (ft)
40 MHz
DC current gain (hFE), min
20
Collector–emitter saturation voltage (Vce sat)
0.15 V
Collector cut-off current (Icbo)
50 nA
Package
TO-5 / TO-39
Application
low frequency, medium power

Sources: [1]

Variants (2)

ROS92
ROS92A

The sources give the same data for all these codes; they do not say how the versions differ.

Click a column heading to sort. „+” adds a variant to the comparison (ROS92).

Description

The ROS92 is a low-frequency, medium-power silicon PNP transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by ICCE (marked in the Agenda as a CCSIT-CE component), in a TO-5 / TO-39 package [1].

Coded as (Romanian system, internal CCSIT-CE code) [2]:

Part Meaning
RO manufacturer’s code: RO (Romania)
S silicon transistor, low power (bipolar, unijunction or field-effect)
92 identification number

hFE (h21E) measured at IC = 10 mA; ft at IC = 50 mA; Vce sat at IC = 10 mA; Icbo at VCB = 80 V [1].

Gallery

ICCE ROS92: TO-5 pinoutNo image available
TO-5 pinout
ICCE ROS92: TO-39 pinout (collector connected to the case)No image available
TO-39 pinout (collector connected to the case)

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.9 „Tranzistoare cu siliciu, PNP, de joasă frecvență, medie putere”, p. 529
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.7 „Sistemul românesc (codul intern CCSIT-CE)”, p. 486