General view

RVM35B2

ICCE

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
05 OCT 2026

Specifications

Material
Si
Polarity
N-channel
Structure / technology
V-MOS
Max. drain–source voltage |Vds|
35 V
Gate–source cut-off / threshold voltage (Vgs off, Vgs th)
−2…−5 V
Drain–source on-resistance (Rds on)
1.8 Ω
Forward transconductance (gm, gfs)
250 mA/V
Package
TO-60

Sources: [1]

Description

The RVM35B2 is a silicon N-channel V-MOS power field-effect transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the field-effect transistors made in Romania by ICCE (marked in the Agenda as a CCSIT-CE component), in a TO-60 package [1].

Next to the eight V-MOS transistors the table prints a TO-39 and a TO-60 drawing without a line between them; following their position, the A versions are taken here as TO-39 and the B versions as TO-60 [1].

Gallery

ICCE RVM35B2: TO-60 package (leads not marked in the table)No image available
TO-60 package (leads not marked in the table)

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 29.2 „Tranzistoare cu efect de cîmp produse în R.S.R.”, p. 548