General view

SND2

IPRS Băneasa

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
05 OCT 2026

Specifications

Material
Si
Polarity
NPN
Max. power dissipation (Pc, Ptot, Pd)
0.5 W
Max. collector–base voltage |Vcb|
25 V
Max. emitter–base voltage |Veb|
4.5 V
Max. collector current |Ic|
0.5 A
DC current gain (hFE), min
20
Package
TO-39
Application
teaching, low frequency

Sources: [1]

Description

The SND2 is a low-frequency silicon NPN transistor for teaching use listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by IPRS Băneasa, in a TO-39 package [1].

According to the Agenda, the SND2 is obtained by sorting from the BSV15…BSV17 and 2N2904…2N2905 families; its TO-39 package has the leads in the order E, B, C [1]. The families named for this NPN transistor (BSV15…17 and 2N2904…2905) are listed elsewhere in the Agenda as PNP transistors, while the PNP SPD2 is listed with the NPN families BSX45…47 and 2N2218…2219, so the families of the two rows appear to have been swapped in the table. A footnote of the table says that these components come from production falling outside the branch technical norms (NTR) and are obtained by sorting, and that the values in the table are guaranteed minimum values; the current-gain column is headed „h21m” [1].

hFE (h21E) measured at IC = 100 mA, VCE = 2 V; ICEO 100 µA at VCE = 15 V [1].

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.19 „Tranzistoare cu siliciu pentru uz didactic”, p. 542