SNX2
IPRS Băneasa
- Manufacturer
- IPRS Băneasa
- Country
- Romania
- Year
- Unknown
- Category
- Components
- Type
- Transistors
- Documentation score
- 1/5
- Last edited
- 05 OCT 2026
Specifications
- Material
- Si
- Polarity
- NPN
- Max. power dissipation (Pc, Ptot, Pd)
- 0.4 W
- Max. collector–base voltage |Vcb|
- 15 V
- Max. emitter–base voltage |Veb|
- 3.5 V
- Max. collector current |Ic|
- 1 A
- Transition frequency (ft)
- 40 MHz
- DC current gain (hFE), min
- 20
- Package
- TO-39
- Application
- teaching, high frequency/voltage, switching
Sources: [1]
Description
The SNX2 is a high-frequency/high-voltage or switching silicon NPN transistor for teaching use listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by IPRS Băneasa, in a TO-39 package [1].
According to the Agenda, the SNX2 is obtained by sorting from the BSX12 family; its TO-39 package has the leads in the order E, B, C [1]. A footnote of the table says that these components come from production falling outside the branch technical norms (NTR) and are obtained by sorting, and that the values in the table are guaranteed minimum values; the current-gain column is headed „h21m” [1].
hFE (h21E) measured at IC = 200 mA, VCE = 2 V; ICEO 100 µA at VCE = 5 V [1].
Gallery
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Documents
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References
- [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.19 „Tranzistoare cu siliciu pentru uz didactic”, p. 542