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2N2369

IPRS Băneasa

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
06 OCT 2026

Specifications

Material
Si
Polarity
NPN
Max. power dissipation (Pc, Ptot, Pd)
0.36 W
Max. collector–base voltage |Vcb|
40 V
Max. collector–emitter voltage |Vce|
15 V
Max. emitter–base voltage |Veb|
4.5 V
Max. collector current |Ic|
0.2 A
Max. junction temperature (Tj)
200 °C
Transition frequency (ft)
500 MHz
DC current gain (hFE), min
40
DC current gain (hFE), max
120
Collector–emitter saturation voltage (Vce sat)
0.2–0.25 V (see Variants)
Turn-on time (ton)
12 ns
Turn-off time (toff)
18 ns
Package
TO-18
Application
switching

Sources: [1][3]

Variants (2)

2N23690.25
2N2369A0.2

Click a column heading to sort. „+” adds a variant to the comparison (2N2369).

Description

The 2N2369 is a silicon NPN switching transistor listed in the Agenda radioelectronistului (2nd edition, 1989) among the bipolar transistors made in Romania by IPRS Băneasa, in a TO-18 package [1].

Coded as (JEDEC system) [2]:

Part Meaning
2 device with 3 electrodes (transistor, thyristor etc.)
N semiconductor device
2369 identification number (01–9999)

hFE (h21E) measured at IC = 10 mA, VCE = 1 V; Vce sat at IC = 10 mA [1].

2N2369A

The 2N2369A is a silicon transistor made by IPRS Băneasa, one of the representative export products of its section 2500 in 1980–1985 [3]. In 1980–1985 section 2500 of IPRS exported 30% of its output by value – over 10 million components – without quality complaints; its representative export types were the 1N148 and BA244 diodes and the 2N2369A, BF173, BB126, BC171, BC172, BC173, BC174, 2N2222, 2N2222A and BF458 [3].

The Agenda lists the 2N2369A a second time in the same table, marked as a CCSIT-CE component (ICCE), with these values: VCBO = 60 V, VCEO = 40 V, Ptot = 360 mW, Tj = 175 °C, Vce sat = 0.5 V at IC = 100 mA, hFE (h21E) = 40…120 at IC = 10 mA, VCE = 1 V, ton = 12 ns, toff = 18 ns, TO-18 package [4]. The specifications above are those of the first listing, on p. 540.

Gallery

IPRS Băneasa 2N2369: TO-18 pinoutNo image available
TO-18 pinout

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.18 „Tranzistoare cu siliciu, NPN, de comutație”, p. 540
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 26.3 „Sistemul american JEDEC”, p. 480
  3. [3]N. Millea, I. Constantinescu (coord.) – „Un secol de electronică în România”, Editura Academiei Române, 2020, section VIII.1.2.5, pp. 404–408
  4. [4]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.18 „Tranzistoare cu siliciu, NPN, de comutație”, p. 541