No image availableEFT306
IPRS Băneasa
- Manufacturer
- IPRS Băneasa
- Country
- Romania
- Year
- Unknown
- Category
- Components
- Type
- Transistors
- Documentation score
- 2/5
- Last edited
- 05 OCT 2026
Specifications
- Material
- Ge
- Polarity
- PNP
- Max. power dissipation (Pc, Ptot)
- 0.15 W
- Max. collector–emitter voltage |Vce|
- 15 V
- Max. emitter–base voltage |Veb|
- 9 V
- Max. collector current |Ic|
- 0.1 A
- Transition frequency (ft)
- 2.5 MHz
- Small-signal current gain (hfe)
- 15–70
- Package
- TO-1A
- Application
- high frequency, low power
Description
The EFT306 is a high-frequency, low-power germanium PNP transistor made in section 2200 (germanium devices) of IPRS Băneasa [1]. The licence for the section’s alloyed indium–germanium transistors – the SFT/EFT, AC and AD series and the ASZ18, AUY31 and AUY32 power transistors in TO3 cases – and for its EFD point-contact diodes belonged to the French firm SESCOSEM of Saint-Égrève, near Grenoble [1]. The section’s lines came from the Electronica works in 1962, and it stopped making germanium devices in 1982; having only the cover of IPRS’s germanium catalogue, the book reconstructs the list of the section’s products from prospectuses and publications up to 1989 [1].
The Agenda radioelectronistului (2nd edition, 1989) lists the EFT306 among the bipolar transistors made by IPRS Băneasa, in the group of high-frequency, low-power germanium PNP transistors, in a TO-1A package [2].
Small-signal current gain h21e measured at IC = 1 mA [2].
Gallery
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Documents
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References
- [1]N. Millea, I. Constantinescu (coord.) – „Un secol de electronică în România”, Editura Academiei Române, 2020, section VIII.1.2.2, pp. 395–396
- [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 28.2.5 „Tranzistoare cu germaniu, PNP, de înaltă frecvență, mică putere”, p. 524